An effective dipole model for predicting band offsets in semiconductor heterojunctionsYING-CHAO RUAN; CHING, W. Y.Journal of applied physics. 1986, Vol 60, Num 11, pp 4035-4038, issn 0021-8979Article

An interpretation of some recent thermopower measurements on GaAs/AlGaAs heterostructuresCANTRELL, D. G.Journal of physics. C. Solid state physics. 1986, Vol 19, Num 34, pp L817-L821, issn 0022-3719Article

Band theory of superlatticesELCI, A.Physical review. B, Condensed matter. 1986, Vol 34, Num 12, pp 8616-8628, issn 0163-1829Article

Etats aux limites des hétérojonctionsSURIS, R. A.Fizika i tehnika poluprovodnikov. 1986, Vol 20, Num 11, pp 2008-2015, issn 0015-3222Article

Calcul autocohérent de la structure des bandes d'énergie du nitrure de tantaleGOLOLOBOV, E. M; DOROZHKIN, N. N; NOVYSH, B. V et al.Fizika tverdogo tela. 1989, Vol 31, Num 2, pp 290-293, issn 0367-3294Article

Influence of nonparabolicity on the superlattice band structureMILANOVIC, V.Physica status solidi. B. Basic research. 1986, Vol 136, Num 2, pp 661-667, issn 0370-1972Article

Origin of metal clustering in transition-metal chalcogenide layers MX₂ (M = Nb, Ta, Mo, Re; X = S, Se)CANADELL, E; LEBEUZE, A; MOULAY ABDELAZIZ EL KHALIFA et al.Journal of the American Chemical Society. 1989, Vol 111, Num 11, pp 3778-3782, issn 0002-7863, 5 p.Article

Electronic energy structure of SiO₂: an application of the recursion methodSTICH, I.Solid state communications. 1986, Vol 58, Num 10, pp 705-708, issn 0038-1098Article

Kramers' theorem in the relativistic electronic structure calculationESCHRIG, H; RICHTER, M.Solid state communications. 1986, Vol 59, Num 12, pp 861-864, issn 0038-1098Article

Low energy electron reflection : possibility for E(k) points mapping above the vacuum levelSTROCOV, V. N.Solid state communications. 1991, Vol 78, Num 9, pp 845-847, issn 0038-1098, 3 p.Article

Theoretical study of band offsets at semiconductor interfacesVAN DE WALLE, C. G; MARTIN, R. M.Physical review. B, Condensed matter. 1987, Vol 35, Num 15, pp 8154-8165, issn 0163-1829Article

Coexisting collective structure and Baryon resonancesSHARMA, S. K; BLASK, W. H; METSCH, B. C et al.Europhysics letters (Print). 1990, Vol 12, Num 8, pp 677-682, issn 0295-5075Article

Structure and bonding in the chalcogenides of the early transition metalsBULLETT, D. W.Polyhedron. 1989, Vol 8, Num 13-14, pp 1619-1624, issn 0277-5387, 6 p.Article

Liquid theory for band structure in a liquidXU, B.-C; STRATT, R. M.The Journal of chemical physics. 1989, Vol 91, Num 9, pp 6813-6827, issn 0021-9606, 15 p.Article

Propriétés optiques de MnIn2Te4 et MnGa2Te4MARTSINKYAVICHYUS, S; AMBRAZYAVICHYUS, G; BEKIMBETOV, R. N et al.Fizika i tehnika poluprovodnikov. 1988, Vol 22, Num 11, pp 1919-1923, issn 0015-3222Article

Superlattice with multiple layers per periodJIANG, H. X; LIN, J. Y.Physical review. B, Condensed matter. 1986, Vol 33, Num 8, pp 5851-5853, issn 0163-1829Article

Inhibited superconductivity induced by localization effects in (EDT-TTF)₂ [Pd(dmit)₂]₂BROSSARD, L; RIBAULT, M; DOUBLET, M. L et al.Synthetic metals. 1993, Vol 56, Num 2-3, pp 2833-2838, issn 0379-6779Conference Paper

Band structure engineering of semiconductor lasers for optical communicationsYABLONOVITCH, E; KANE, E. O.Journal of lightwave technology. 1988, Vol 6, Num 8, pp 1292-1299, issn 0733-8724Article

Band lineups at II-VI heterojunctions: failure of the common-anion ruleTERSOFF, J.Physical review letters. 1986, Vol 56, Num 25, pp 2755-2758, issn 0031-9007Article

The dielectric function of bismuth and the temperature dependence of the band structure parameters = La fonction diélectrique du bismuth et la dépendance en température des paramètres de structure de bandesMIKHAIL, I. F. I; ISMAIL, I. M. M.Journal of physics. C. Solid state physics. 1986, Vol 19, Num 27, pp 5393-5405, issn 0022-3719Article

Band structure of a superlattice with a two well periodIHM, G; NOH, S. K; LEE, J. I et al.Superlattices and microstructures. 1992, Vol 12, Num 2, pp 155-158, issn 0749-6036Article

Tamm minibands in superlatticesTIKHODEEV, S. G.JETP letters. 1991, Vol 53, Num 3, pp 171-176, issn 0021-3640, 6 p.Article

X-Ray excited and thermoluminescence of gadolinium activated KCaF₃SOMAIAH, K; VENKATA NARAYANA, M; BRIXNER, L. H et al.Materials chemistry and physics. 1990, Vol 26, Num 1, pp 13-19, issn 0254-0584Article

Explicit incorporation of the energy-band structure into an analysis of the defect chemistry of PbTe and SnTeYI GAO SHA; BREBRICK, R. F.Journal of electronic materials. 1989, Vol 18, Num 3, pp 421-443, issn 0361-5235, 23 p.Article

On the magnetic behaviour of heavy fermion systems = Sur le comportement magnétique des systèmes à fermions lourdsGREWE, N; WELSLAU, B.Solid state communications. 1988, Vol 65, Num 6, pp 437-439, issn 0038-1098Article